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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8.4A/8A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8.4A, 8A
- Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2.7W, 3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4914BDY-T1-GE3 is a dual N-channel 30-V MOSFET with an integrated Schottky diode in an SO-8 package. Channel-1 offers a maximum RDS(on) of 21 mΩ at VGS = 10 V and 27 mΩ at VGS = 4.5 V, with a continuous drain current (ID) of 8.4 A. Channel-2 provides a maximum RDS(on) of 20 mΩ at VGS = 10 V and 25 mΩ at VGS = 4.5 V, supporting an ID of 8 A. The device features a typical total gate charge (Qg) of 6.7 nC for Channel-1 and 7.0 nC for Channel-2. It includes a Schottky diode with a forward voltage of 0.50 V at IF = 1.0 A.
Feature Summary
- Integrates two independent N-channel MOSFETs with a common source/drain pin and a dedicated Schottky diode within a single LITTLE FOOT Plus package.
- Manufactured using TrenchFET technology to achieve low on-state resistance and fast switching characteristics.
- Compliant with RoHS Directive 2002/95/EC and IEC 61249-2-21 halogen-free definitions.
Applications
- Notebook PC system power DC-to-DC conversion
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -E3 suffix indicates lead-free construction, while the -GE3 suffix confirms both lead-free and halogen-free compliance according to IEC 61249-2-21 standards. Confirm that the received parts match the exact alphanumeric designation required for the design to ensure regulatory adherence.
Selection Notes
Select this component for applications requiring compact dual-switching solutions with synchronous rectification capabilities. The shared source/drain configuration simplifies PCB layout for half-bridge or full-bridge topologies. Evaluate thermal management requirements based on the junction-to-ambient resistance values provided in the datasheet for steady-state and pulsed operations.
Part Context
This part belongs to the Vishay Siliconix Si4914BDY series, which utilizes the LITTLE FOOT Plus packaging format. The series is designed for high-density power management applications where space constraints are critical. The integration of the Schottky diode alongside the dual MOSFETs distinguishes it from standard dual-transistor packages.
Replacement Considerations
SI4914BDY-T1-E3
FAQ
What is the function of the shared pin in the SO-8 package?
Pin 5 serves as the common Source for Channel-1 and Drain for Channel-2 (S1/D2), facilitating efficient layout for bridge configurations.
Is the integrated Schottky diode isolated from the MOSFET channels?
Yes, the Schottky diode is connected between the Source and Drain of Channel-2, providing a separate path for reverse recovery currents.
How does the gate threshold voltage vary with temperature?
The Gate Threshold Voltage (VGS(th)) exhibits a negative temperature coefficient, decreasing by approximately 6.2 mV/°C as the junction temperature increases.
