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The Vishay Siliconix Si4914DY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode in an SO-8 package. It features a 30 V drain-source voltage rating. Channel-1 on-resistance is 0.023 Ω at 10 V gate drive and 7.0 A, or 0.032 Ω at 4.5 V and 5.6 A. Channel-2 on-resistance is 0.020 Ω at 10 V and 7.4 A, or 0.027 Ω at 4.5 V and 6.4 A. The integrated Schottky diode has a forward voltage of 0.40 V at 1.0 A. Maximum power dissipation is 1.9 W for Channel-1 and 2.0 W for Channel-2 at 25 °C ambient.
Verify the component against the official Vishay datasheet Document Number 72938 to confirm electrical parameters and pinout compatibility. Ensure that the SO-8 surface mount package meets the thermal requirements of the target application design.
Select this component when a compact solution combining dual low-voltage MOSFETs and a fast-recovery Schottky barrier diode is required. Evaluate the specific on-resistance values at the intended gate drive voltage to ensure adequate efficiency for the load current.
This device belongs to the Vishay Siliconix LITTLE FOOT Plus family, which integrates multiple semiconductor functions into small surface-mount packages to reduce board space. The Si4914DY specifically combines dual N-channel enhancement mode field-effect transistors with a monolithic Schottky diode.
No public confirmed substitute part numbers are available in the provided documentation.