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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A/10.5A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A, 10.5A
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.3W, 3.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4916DY-T1-E3 is a dual N-channel MOSFET with an integrated Schottky diode, housed in an SO-8 package. It features a 30 V drain-source voltage rating and a maximum continuous drain current of 10 A for Channel 1 and 10.5 A for Channel 2 at TC = 25 °C. The on-state resistance (RDS(on)) is 0.018 Ω at VGS = 10 V and ID = 10 A for both channels. The device incorporates TrenchFET technology and includes a Schottky diode with a forward voltage of 0.50 V at IF = 1.0 A. Total gate charge is typically 6.6 nC for Channel 1 and 8.9 nC for Channel 2.
Feature Summary
- Integrates two independent N-channel MOSFETs and a common cathode Schottky diode within a single LITTLE FOOT Plus package.
- Utilizes advanced TrenchFET technology to achieve low on-state resistance and optimized switching performance.
- Features a lead-free and halogen-free construction compliant with IEC 61249-2-21 standards.
Applications
- DC/DC converters
- Notebook power management circuits
Procurement Notes
Verify the component status before design finalization, as distribution listings indicate potential end-of-life or discontinuation status. Confirm that the specific ordering suffix matches the required lead-free and halogen-free specifications. Ensure compatibility with the SO-8 surface mount footprint during the procurement phase.
Selection Notes
Select this component for applications requiring a compact solution combining dual high-side or low-side switching with synchronous rectification. Evaluate thermal dissipation requirements against the specified junction-to-ambient resistance values. Verify that the 30 V voltage rating provides adequate margin for the target DC/DC converter topology.
Part Context
This part belongs to the Vishay Siliconix Si49 series, which focuses on integrating MOSFETs with Schottky diodes to reduce board space. The SO-8 package allows for efficient heat transfer through the drain pad. The product utilizes TrenchFET technology to minimize conduction losses while maintaining fast switching speeds suitable for modern power supplies.
Replacement Considerations
The datasheet does not list official direct replacements. Consider evaluating other Vishay dual MOSFETs with Schottky diodes in the SO-8 package, ensuring identical pinout and electrical parameters match the original design constraints.
