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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10A/10.5A 8SOIC
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Half Bridge)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10A, 10.5A
- Rds On (Max) @ Id, Vgs：18mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：3.3W, 3.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4916DY-T1-GE3 is a dual N-channel 30-V (D-S) MOSFET with an integrated Schottky diode, utilizing TrenchFET technology in an SO-8 package. Channel-1 offers a maximum RDS(on) of 0.018 Ω at VGS = 10 V and 10 A, while Channel-2 provides 0.018 Ω at VGS = 10 V and 10.5 A. The device supports continuous drain currents up to 10 A for Channel-1 and 10.5 A for Channel-2 at TC = 25 °C. It features a typical total gate charge of 6.6 nC for Channel-1 and 8.9 nC for Channel-2. The integrated Schottky diode has a forward voltage of 0.50 V at IF = 1.0 A.
Feature Summary
- Integrates two independent N-channel MOSFETs with a common source/drain pin and a dedicated Schottky diode within a single LITTLE FOOT Plus package.
- Utilizes TrenchFET technology to achieve low on-state resistance and fast switching characteristics suitable for high-frequency applications.
- Manufactured using halogen-free materials compliant with IEC 61249-2-21 standards.
Applications
- DC/DC converters for notebook computers
- Synchronous rectification circuits
- Low voltage power management systems
Procurement Notes
Verify the specific ordering suffix against current manufacturer documentation to confirm lead-free and halogen-free status. Confirm package dimensions match the SO-8 narrow profile specifications. Validate thermal performance requirements against the junction-to-ambient resistance ratings provided in the datasheet before finalizing component selection.
Selection Notes
Select this component when a compact solution combining dual N-channel switching and freewheeling rectification is required. Ensure the operating voltage does not exceed the 30-V drain-source breakdown rating. Consider the thermal dissipation capabilities relative to the expected load current and ambient temperature conditions.
Part Context
This part belongs to the Vishay Siliconix SI49xx series of dual MOSFETs designed for space-constrained applications. It integrates standard enhancement-mode N-channel MOSFETs with a Schottky barrier diode to improve efficiency in synchronous rectifier topologies commonly found in portable electronics.
Replacement Considerations
Direct replacements must match the 30-V rating, SO-8 package, and dual-N-channel plus Schottky configuration. Verify that any substitute maintains equivalent RDS(on), gate charge, and thermal resistance specifications to ensure circuit compatibility.
