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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：16mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：2070pF @ 15V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4922BDY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 8 A at 25 °C case temperature. The on-state resistance (RDS(on)) is specified at 0.016 Ω with VGS = 10 V, 0.018 Ω with VGS = 4.5 V, and 0.024 Ω with VGS = 2.5 V. Maximum power dissipation reaches 3.1 W at TC = 25 °C. Operating junction temperatures range from -50 °C to 150 °C.
Feature Summary
- Dual N-channel configuration within a single surface-mount package
- TrenchFET power MOSFET architecture for optimized performance
- Compliant with RoHS Directive 2002/95/EC
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. Confirm that the component meets all required electrical parameters for the intended application. Check for any recent product change notifications or obsolescence notices issued by the manufacturer. Ensure compliance with relevant environmental directives applicable to the final assembly.
Selection Notes
Evaluate thermal requirements based on the maximum junction-to-ambient thermal resistance of 62.5 °C/W. Consider the gate threshold voltage characteristics when designing drive circuits. Verify that the selected operating conditions remain within the absolute maximum ratings provided in the datasheet to ensure device reliability.
Part Context
This component belongs to the Vishay Siliconix Si4922BDY series of dual N-channel MOSFETs. It is manufactured using silicon technology and utilizes the SO-8 narrow package format. The part number includes an E3 suffix indicating lead-free construction compliant with international standards.
Replacement Considerations
Consult the official Vishay datasheet for recommended alternative part numbers. Verify pinout compatibility and electrical specifications before substituting components.
