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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 6.2A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.2A
- Rds On (Max) @ Id, Vgs：21mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：70nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4923DY-T1-GE3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 6.2A at 25°C. The device utilizes TrenchFET technology for low on-resistance, specified as 18 milliohms at 4.5V gate drive with 6.2A current. It is housed in an 8-SOIC surface-mount package with a maximum power dissipation of 1.1W. The component supports logic-level gate operation and operates within a junction temperature range of -55°C to 150°C.
Feature Summary
- Dual P-channel configuration integrating two independent switches in a single package
- TrenchFET technology enabling low on-resistance for efficient power switching
- Logic-level gate threshold allowing direct drive from standard digital interfaces
- Surface-mount 8-SOIC packaging optimized for automated assembly processes
Applications
- Low-side or high-side load switching in consumer electronics
- Battery protection circuits in portable devices
- Power management units requiring compact dual-switch solutions
- DC-DC converter input/output stage control
Procurement Notes
Verify component authenticity through authorized distributors due to obsolete status. Confirm RoHS compliance and lead-free soldering requirements for environmental standards. Check datasheet revisions for any parameter updates prior to integration. Ensure storage conditions maintain moisture sensitivity level integrity before reflow soldering.
Selection Notes
Evaluate thermal performance under expected load currents to ensure junction temperatures remain within limits. Compare on-resistance values against alternative components for efficiency requirements. Consider gate charge characteristics for switching speed applications. Verify package compatibility with existing PCB footprint and assembly equipment capabilities.
Part Context
This component belongs to the SI49 series of dual P-channel MOSFET arrays from Vishay Siliconix. The series emphasizes compact form factors and high current density for modern electronic designs. The TrenchFET platform provides improved switching performance compared to traditional planar technologies. This specific model targets applications requiring dual switch functionality in minimal space.
Replacement Considerations
SI4925DDY-T1-GE3 is listed as a similar available substitute. Verify pinout compatibility and electrical parameters before substitution. Consult official documentation for any functional differences between original and replacement parts.
