SI4925BDY-T1-GE3

Overview

The Vishay Siliconix SI4925BDY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage (VDS) of -30 V and a continuous drain current (ID) of -7.1 A at 25 °C. The on-state resistance (RDS(on)) is specified as 0.025 Ω at VGS = -10 V and -7.1 A, and 0.041 Ω at VGS = -4.5 V and -5.5 A. Total gate charge (Qg) reaches a maximum of 50 nC at VDS = -15 V, VGS = -10 V, and ID = -7.1 A. The device operates within a junction temperature range of -55 °C to 150 °C and is housed in an SOIC-8 surface-mount package.

Feature Summary

• Dual P-channel configuration with independent channel control
• TrenchFET power MOSFET architecture for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Load switches for notebook PCs
• Load switches for desktop PCs
• Load switches for game stations

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm compliance requirements. The -GE3 suffix indicates lead-free and halogen-free status according to IEC 61249-2-21. Confirm package type and reel specifications match design requirements before procurement.

Selection Notes

Select this component for applications requiring dual P-channel switching with low on-resistance. Ensure gate drive voltages align with the specified RDS(on) test conditions. Verify thermal management capabilities meet the steady-state junction-to-ambient resistance ratings for the intended operating environment.

Part Context

This part belongs to the Si4925BDY series from Vishay Siliconix. It is a specialized dual MOSFET designed for portable computing load switch applications. The product utilizes advanced TrenchFET technology to achieve high efficiency in compact surface-mount packages.

Replacement Considerations

Consult official datasheets for cross-reference data. No public substitute part numbers are confirmed in the provided source material.