SI4933DY-T1-E3

Overview

The SI4933DY-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-SOIC surface-mount package. The device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 7.4A at 25°C. The maximum on-resistance is 14 milliohms at Vgs = -4.5V and Id = 9.8A, with a gate threshold voltage (Vgs(th)) maximum of 1V at 500µA. Gate charge (Qg) is 70nC at 4.5V. Power dissipation is rated at 1.1W, and the operating junction temperature range extends from -55°C to 150°C.

Feature Summary

• Dual P-channel configuration within a single compact SOIC-8 package
• TrenchFET power FET technology for optimized performance
• Logic-level gate drive capability with low threshold voltage

Applications

• Low-side switching applications requiring dual channel control
• Power management circuits in portable electronic devices
• Battery protection and load switch implementations

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for obsolescence notices as this part may be discontinued. Ensure storage conditions meet moisture sensitivity level requirements before soldering.

Selection Notes

Select this component when a dual P-channel solution is required in an 8-pin SOIC footprint. Verify that the 12V voltage rating and 7.4A current capacity align with circuit demands. Consider thermal management due to the 1.1W power dissipation limit in small packages.

Part Context

This part belongs to the SI4 series of TrenchFET MOSFETs from Vishay Siliconix. It serves as a replacement for legacy discrete dual P-channel designs, offering reduced board space and improved switching characteristics compared to older technologies.

Replacement Considerations

SI4933DY-T1-GE3 is listed as an alternative variant. Verify pin compatibility and electrical parameter equivalence before substitution.