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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4.4A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4.4A
- Rds On (Max) @ Id, Vgs：36mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4936ADY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a continuous drain current of 5.9 A at 25 °C, with a maximum on-state resistance of 0.036 Ω at VGS = 10 V and 0.053 Ω at VGS = 4.5 V. Packaged in an SO-8 surface-mount housing, it offers a typical gate charge of 13 nC and a forward transconductance of 15 S.
Feature Summary
- Dual N-channel configuration housed in an SO-8 package
- TrenchFET power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21
Applications
- DC-DC converters
- Load switches
- Power management circuits
Procurement Notes
Verify the specific ordering suffix against official documentation before procurement. The E3 suffix indicates lead-free composition. Confirm availability status directly with authorized distributors or the manufacturer, as production lifecycles may change. Ensure all electrical parameters match the design requirements prior to finalizing orders.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30 V rating is required. Evaluate the thermal resistance characteristics for the intended application environment. Compare the on-state resistance values at different gate voltages against the driving circuit capabilities to ensure efficient switching performance.
Part Context
This part belongs to the Vishay Siliconix Si4936 series of dual N-channel MOSFETs. It shares the same physical package and general architecture as variants like the SI4936BDY-T1-E3, differing primarily in specific electrical thresholds and on-resistance specifications.
Replacement Considerations
The SI4936BDY-T1-E3 serves as a verified alternative within the same product family. Verify that the replacement's electrical ratings meet the original design constraints.
