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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6.9A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6.9A
- Rds On (Max) @ Id, Vgs：35mOhm @ 5.9A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：15nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：530pF @ 15V
- Power - Max：2.8W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4936BDY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in an SOIC-8 surface-mount package. It features a drain-source voltage rating of 30 V and a continuous drain current of 6.9 A at 25 °C case temperature. The on-state resistance is specified as 0.035 Ω at VGS = 10 V and 0.051 Ω at VGS = 4.5 V. Total gate charge is typically 9.1 nC at VGS = 10 V. The device supports an operating junction temperature range from -55 °C to +150 °C with a maximum power dissipation of 2.8 W at 25 °C.
Feature Summary
- Dual N-channel configuration within a single compact SO-8 package
- TrenchFET power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
Applications
- Low current DC/DC conversion circuits
- Notebook system power management
Procurement Notes
Verify the specific ordering suffix when sourcing components. The GE3 designation indicates lead-free and halogen-free compliance, whereas the E3 variant is lead-free only. Confirm RoHS directive alignment and ensure the component matches the required environmental specifications for the target assembly process before procurement.
Selection Notes
Evaluate thermal requirements based on the 62.5 °C/W maximum junction-to-ambient thermal resistance. Ensure the application operates within the 30 V drain-source voltage limit and accounts for current derating at elevated case temperatures. Verify that the gate drive voltage meets the threshold requirements for the desired on-resistance level.
Part Context
This component belongs to the Vishay Siliconix Si4936 series of dual N-channel MOSFETs. It shares the same electrical characteristics and pinout with the Si4936BDY-T1-E3 part number, differing primarily in the halogen-free manufacturing specification indicated by the GE3 suffix.
Replacement Considerations
Si4936BDY-T1-E3
FAQ
What is the typical total gate charge (Qg) for this device?
The typical total gate charge is 9.1 nC when tested at VDS = 15 V, VGS = 10 V, and ID = 5.9 A.
Does the SI4936BDY-T1-GE3 support synchronous rectification applications?
Yes, the device includes an integrated body diode with a reverse recovery time of 20 ns to 40 ns, making it suitable for synchronous rectification in low current DC/DC converters.
What is the maximum pulsed drain current capability?
The maximum pulsed drain current (IDM) is rated at 30 A.
