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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 5.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.8A
- Rds On (Max) @ Id, Vgs：40mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：325pF @ 15V
- Power - Max：2.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4936CDY-T1-GE3 is a dual N-channel power MOSFET utilizing TrenchFET technology. It features a 30 V drain-source voltage rating and a continuous drain current of 5.8 A at a case temperature of 25 °C. The device offers a maximum on-state resistance of 0.040 Ω at VGS = 10 V and 0.050 Ω at VGS = 4.5 V. Typical total gate charge is 2.8 nC at VGS = 4.5 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 surface-mount package.
Feature Summary
- Dual N-channel configuration with independent gates for compact circuit integration
- TrenchFET power MOSFET architecture providing low on-resistance and fast switching characteristics
- Lead-free and halogen-free material compliance
Applications
- Low current DC/DC conversion
- Notebook system power distribution
Procurement Notes
Verify the component against the official Vishay datasheet (Document Number: 69097) to confirm electrical parameters and physical dimensions. Ensure that the SO-8 package footprint matches the recommended minimum pads specified in Application Note 826. Confirm lead-free status and check for any specific handling requirements related to moisture sensitivity levels before assembly.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET with a 30 V breakdown voltage. Evaluate thermal performance based on the junction-to-ambient and junction-to-case thermal resistance ratings provided in the specifications. Consider the gate charge values when designing drive circuits to ensure adequate switching speeds and minimize driver losses.
Part Context
This part belongs to the Vishay Siliconix SI4936 series, which includes variants such as SI4936BDY-T1-E3 and SQ4936EY-T1-GE3. These components share similar core technologies but may differ in specific electrical tolerances or automotive qualification standards. The SI4936CDY-T1-GE3 specifically denotes the commercial grade version in an SO-8 package.
Replacement Considerations
Direct substitutes include SI4936BDY-T1-E3 and SQ4936EY-T1-GE3 from Vishay. Verify pinout compatibility and ensure that the alternative part meets the required 30 V and 5.8 A specifications.
