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Product Detailed Parameters
- Description：MOSFET 2N-CH 40V 4.2A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：40V
- Current - Continuous Drain (Id) @ 25°C：4.2A
- Rds On (Max) @ Id, Vgs：36mOhm @ 5.7A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4940DY-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage (VDS) of 40 V and a maximum continuous drain current (ID) of 5.7 A at 25 °C. The device offers a low on-state resistance (RDS(on)) of 0.036 Ω at VGS = 10 V and 0.059 Ω at VGS = 4.5 V. Packaged in an SO-8 surface-mount footprint, it supports a junction temperature range from -55 °C to +150 °C. Key dynamic parameters include a total gate charge (Qg) of 14 nC and a source-drain reverse recovery time (trr) of 70 ns.
Feature Summary
- Dual N-channel configuration with integrated body diodes for efficient switching applications
- TrenchFET power MOSFET structure providing optimized on-resistance and fast switching performance
- RoHS compliant and halogen-free construction
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific ordering suffix when sourcing replacements. The suffix 'T1' indicates reel packaging, while 'E3' denotes lead-free composition. Confirm that the required package style matches the SO-8 form factor specified in the datasheet. Ensure compliance with RoHS directives if applicable to your manufacturing standards.
Selection Notes
Select this component for designs requiring a compact dual N-channel solution with a 40 V rating. Evaluate thermal constraints carefully, as the steady-state junction-to-ambient thermal resistance is 110 °C/W. Verify that the gate drive voltage meets the minimum threshold for optimal RDS(on) performance, particularly at lower voltages like 4.5 V.
Part Context
This part belongs to the Vishay Siliconix SI4 series of TrenchFET power MOSFETs. It is designed for general-purpose switching applications where space efficiency and low conduction losses are critical. The dual configuration allows for independent control of two channels within a single standard SO-8 package.
Replacement Considerations
Check for direct equivalents such as the SI4940DY-E3 variant. When substituting, ensure the replacement maintains the same SO-8 package dimensions and electrical ratings, specifically the 40 V breakdown voltage and 5.7 A current capacity.
FAQ
What is the maximum pulsed drain current for the SI4940DY?
The absolute maximum pulsed drain current (IDM) is rated at 30 A.
How does the on-resistance vary with gate-source voltage?
The RDS(on) is 0.036 Ω at VGS = 10 V and increases to 0.059 Ω at VGS = 4.5 V under specified test conditions.
What is the typical forward transconductance (gfs)?
The typical forward transconductance is 12 S when measured at VDS = 15 V and ID = 5.7 A.
