SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The SI4942DY-T1-E3 is a silicon N-channel Power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package and operates with a drain-source voltage (Vds) of 40V and a gate-source voltage (Vgs) of 20V. The device is designed for efficient power switching applications within the specified voltage range.
This component is officially listed as obsolete or end-of-life by the manufacturer. Availability is restricted, and standard distribution channels may not stock new units. Verification of current lifecycle status and sourcing from authorized distributors or surplus suppliers is required before integration into designs.
Engineers should evaluate alternative components from the same series or newer generations due to the obsolescence status. Ensure that replacement parts maintain compatibility with the 40V Vds and 20V Vgs specifications while considering updated thermal and electrical characteristics.
The SI4942DY-T1-E3 belongs to the SI4 series of MOSFETs from Vishay Siliconix. This series typically features TrenchFET technology for improved efficiency. The part number suffix indicates tape-and-reel packaging and RoHS compliance.