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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 6.3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.3A
- Rds On (Max) @ Id, Vgs：19mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4943BDY-T1-E3 is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an SO-8 package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -8.4 A at 25 °C. The on-state resistance (RDS(on)) is specified as 0.019 Ω at VGS = -10 V and -8.4 A, and 0.031 Ω at VGS = -4.5 V and -6.7 A. Total gate charge (Qg) is typically 25 nC at VDS = -10 V, VGS = -5 V, and ID = -8.4 A. Maximum power dissipation is 2.0 W at 25 °C, with an operating junction temperature range from -55 °C to +150 °C.
Feature Summary
- Dual P-Channel configuration within a single surface-mount package
- TrenchFET Power MOSFET technology for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load switching for computer systems
- Load switching for game systems
- Battery switching for 2-cell Li-Ion applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The SI4943BDY-T1-E3 designation indicates a lead-free product. Distinguish this variant from the SI4943BDY-T1-GE3, which adds halogen-free compliance. Confirm RoHS Directive 2002/95/EC alignment through official manufacturer documentation prior to procurement.
Selection Notes
Evaluate thermal management requirements against the maximum junction-to-ambient resistance ratings provided in the datasheet. Ensure gate drive voltages remain within the specified limits for optimal RDS(on) performance. Validate that the continuous and pulsed drain currents meet the application's peak load demands without exceeding absolute maximum ratings.
Part Context
This component belongs to the Vishay Siliconix Si4943BDY series of dual P-Channel MOSFETs. It is manufactured using silicon technology and utilizes the SO-8 narrow package format. The device is part of the broader TrenchFET family designed for efficient power switching in compact electronic designs.
Replacement Considerations
Cross-reference electrical parameters such as VDS, ID, and RDS(on) with alternative dual P-Channel MOSFETs. Verify pinout compatibility and package dimensions to ensure mechanical fit. Consult official substitution lists or technical support for confirmed equivalent part numbers.
FAQ
What is the typical total gate charge (Qg) for the SI4943BDY-T1-E3?
The typical total gate charge is 25 nC, measured at VDS = -10 V, VGS = -5 V, and ID = -8.4 A.
What is the maximum operating junction temperature for this device?
The maximum operating junction temperature is +150 °C.
How does the on-state resistance vary with gate-source voltage?
The RDS(on) is 0.019 Ω at VGS = -10 V and 0.031 Ω at VGS = -4.5 V, both tested at their respective rated drain currents.
