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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 6.3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6.3A
- Rds On (Max) @ Id, Vgs：19mOhm @ 8.4A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4943BDY-T1-GE3 is a dual P-channel power MOSFET manufactured by Vishay Siliconix using TrenchFET technology. It features an SOIC-8 surface-mount package and operates with a drain-source voltage (Vds) of -20 V and a continuous drain current (Id) of 8.4 A at 25°C. The device exhibits a maximum on-resistance (Rds(on)) of 19 mΩ at a gate-source voltage (Vgs) of 10 V. Power dissipation is rated at 2.0 W, with an operating temperature range from -55°C to +150°C junction temperature.
Feature Summary
- Dual P-channel configuration in a compact SOIC-8 package
- TrenchFET technology for optimized on-resistance performance
- Logic-level gate drive capability
Applications
- Power management circuits requiring dual P-channel switching
- Load switch applications in portable electronics
- Battery protection and power distribution modules
Procurement Notes
Verify the specific suffix T1-GE3 against the manufacturer datasheet to confirm reel packaging and RoHS compliance status. Ensure the ordering quantity aligns with the standard factory pack size of 2500 units. Cross-reference the Mouser part number 781-SI4943BDY-GE3 for availability details. Confirm thermal requirements match the 2.0 W dissipation rating for the target PCB layout.
Selection Notes
Select this component when a dual P-channel solution is required in an SOIC-8 footprint. Compare Rds(on) values at the intended gate drive voltage to ensure efficiency targets are met. Verify that the 8.4 A current rating accommodates peak load conditions without exceeding thermal limits. Consider the -20 V breakdown voltage relative to the system supply rails.
Part Context
This part belongs to the SI4 series of TrenchFET power MOSFETs from Vishay Siliconix. The SI4943 variant specifically provides dual P-channel functionality, distinguishing it from single-channel counterparts like the SI4850 or other voltage ratings within the family. It utilizes the LITTLE FOOT package design for high power density.
Replacement Considerations
The part number alias SI4943BDY-GE3 indicates equivalent electrical specifications. Verify pinout compatibility before substituting with other dual P-channel MOSFETs in the SOIC-8 package. Check datasheets for differences in Rds(on) thresholds and gate charge characteristics.
