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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：8A
- Rds On (Max) @ Id, Vgs：19.2mOhm @ 8.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：62nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1945pF @ 10V
- Power - Max：3.1W
- Operating Temperature：-50°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4943CDY-T1-GE3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in an SO-8 surface-mount package. It features a drain-source voltage (VDS) of -20 V and a continuous drain current (ID) of -8 A at 25 °C case temperature. The maximum on-state resistance (RDS(on)) is 0.0192 Ω at VGS = -10 V and 0.0330 Ω at VGS = -4.5 V. Total gate charge (Qg) reaches a maximum of 62 nC at VGS = -10 V. The device supports a junction temperature range from -50 °C to +150 °C and includes 100% Rg and UIS testing.
Feature Summary
- Dual P-channel configuration with independent channel control
- TrenchFET power MOSFET architecture for optimized performance
- Logic-level gate drive capability with low threshold voltage
- Lead-free and halogen-free compliant packaging
Applications
- Load switching for computer systems
- Load switching for game systems
- Battery switching for 2-cell Li-ion applications
Procurement Notes
Verify the specific ordering suffix 'T1' corresponds to the required tape-and-reel packaging format before finalizing procurement orders. Confirm that the component meets RoHS3 compliance requirements as specified in the datasheet documentation. Ensure that the SO-8 package dimensions align with the recommended minimum pad layout provided in Application Note 826 to guarantee proper surface mounting reliability.
Selection Notes
Select this component when a dual P-channel solution is required within a 20 V system. The logic-level gate drive characteristics make it suitable for direct interfacing with standard logic outputs. Evaluate thermal management requirements based on the junction-to-ambient and junction-to-foot thermal resistance ratings under expected operating conditions.
Part Context
This part belongs to the Vishay Siliconix SI4943 series of dual P-channel MOSFETs. It shares the same electrical specifications and pinout as the SI4943BDY-T1-GE3 variant, differing primarily in manufacturing lot or minor process variations not affecting functional parameters. Both variants utilize the SO-8 package and TrenchFET technology.
Replacement Considerations
The SI4943BDY-T1-GE3 serves as a confirmed equivalent replacement with identical electrical specifications and pinout compatibility.
