SI4946BEY-T1-E3

Overview

The Vishay Siliconix SI4946BEY-T1-E3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a continuous drain current of 6.5 A at 25 °C case temperature. The device offers a maximum on-state resistance of 0.041 Ω at VGS = 10 V and 0.052 Ω at VGS = 4.5 V. It supports a maximum junction temperature of 175 °C and is housed in an SO-8 surface-mount package.

Feature Summary

• Dual N-channel configuration with independent gate, source, and drain terminals for each channel.
• TrenchFET power MOSFET architecture designed to minimize on-state resistance.
• Halogen-free construction compliant with IEC 61249-2-21 standards.

Applications

• High-side or low-side switching applications requiring dual channel isolation.
• DC-DC converter circuits operating within the specified voltage and current limits.
• Power management systems utilizing surface mount assembly techniques.

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer's part number and datasheet revision against official Vishay documentation. Confirm that the ordering suffix matches the required lead-free and halogen-free specifications. Ensure the received components match the SO-8 package dimensions and pinout configuration detailed in the package information document.

Selection Notes

Select this component when a dual N-channel topology is required within a single SO-8 footprint. Evaluate the thermal resistance ratings to ensure adequate heat dissipation for the intended duty cycle. Verify that the gate drive voltage meets the minimum threshold for the desired on-state resistance level.

Part Context

This component belongs to the Vishay Siliconix Si4946BEY series of dual N-channel MOSFETs. It utilizes the standard SO-8 narrow package format. The product line incorporates TrenchFET technology to achieve low on-resistance characteristics suitable for general-purpose power switching applications.

Replacement Considerations

The SI4946BEY-T1-GE3 is a verified equivalent variant offering identical electrical performance with explicit halogen-free compliance confirmation.

FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature is rated at 175 °C.

How is the internal structure configured?

The device contains two independent N-channel MOSFETs sharing a common drain connection within an eight-pin SO-8 package.

What is the typical total gate charge?

The typical total gate charge is 17 nC when tested at VDS = 30 V, VGS = 10 V, and ID = 5.3 A.