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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 6.5A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：6.5A
- Rds On (Max) @ Id, Vgs：41mOhm @ 5.3A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：840pF @ 30V
- Power - Max：3.7W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4946BEY-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and supports a continuous drain current of 6.5 A at a case temperature of 25 °C. The device operates with a maximum junction temperature of 175 °C and is housed in an SO-8 surface-mount package. Electrical characteristics include a typical on-state resistance of 0.041 Ω at VGS = 10 V and 0.052 Ω at VGS = 4.5 V, alongside a total gate charge of 17 nC at VGS = 10 V.
Feature Summary
- Dual N-channel configuration within a single SO-8 package
- TrenchFET power MOSFET architecture for optimized performance
- Halogen-free construction compliant with IEC 61249-2-21 standards
- High thermal capability supporting up to 175 °C junction temperature
Applications
- DC-DC converter circuits
- Power management modules
- Load switching applications
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm halogen-free status and lead-free composition. Confirm that the component matches the exact datasheet revision required for your design specifications. Ensure all electrical parameters align with your system requirements before finalizing procurement decisions.
Selection Notes
Select this component when a dual N-channel configuration is required in an SO-8 footprint. Consider the 60 V breakdown voltage and 6.5 A current capacity relative to your load requirements. Evaluate the thermal resistance values to ensure adequate heat dissipation for your specific operating environment and duty cycle constraints.
Part Context
This part belongs to the Vishay Siliconix Si4946BEY series of dual N-channel MOSFETs. It utilizes the standard SO-8 (Narrow) package format defined by JEDEC standards. The product line incorporates TrenchFET technology to achieve low on-resistance and efficient switching characteristics suitable for modern power electronics designs.
Replacement Considerations
Direct replacements must match the dual N-channel topology, 60 V rating, and SO-8 package dimensions. Verify pinout compatibility and thermal resistance characteristics to ensure seamless integration without redesigning the PCB layout or altering the driving circuitry.
