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Product Detailed Parameters
- Description：MOSFET 2N-CH 60V 5.2A 8SO
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：5.2A (Ta), 6.1A (Tc)
- Rds On (Max) @ Id, Vgs：40.9mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：10nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：350pF @ 30V
- Power - Max：2W (Ta), 2.8W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SO
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix SI4946CDY-T1-GE3 is a dual N-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 60 V drain-source voltage rating and a maximum continuous drain current of 6.1 A at a case temperature of 25 °C. The device offers a typical on-state resistance of 0.033 Ω at VGS = 10 V and 0.043 Ω at VGS = 4.5 V. Total gate charge is typically 5.1 nC at VGS = 10 V, with a threshold voltage ranging from 1 V to 3 V. It operates within a junction temperature range of -55 °C to +150 °C and is housed in an SO-8 surface-mount package.
Feature Summary
- TrenchFET power MOSFET architecture for optimized performance
- Dual N-channel configuration in a compact SO-8 package
- High thermal stability with a maximum junction temperature of 150 °C
Applications
- DC/DC converters
- Load switch circuits
- Inverters
- Circuit protection systems
Procurement Notes
Verify the specific ordering suffix '-T1-GE3' to confirm lead-free and halogen-free compliance as defined by Vishay standards. Ensure that the SO-8 package dimensions align with the recommended minimum pad layout provided in Application Note 826 to guarantee reliable surface mounting during assembly processes.
Selection Notes
Select this component when a dual N-channel topology is required for 60 V applications. The low gate charge characteristics support efficient switching in high-frequency environments. Evaluate the thermal derating curves against the expected ambient temperatures to ensure the continuous drain current remains within safe operating limits under steady-state conditions.
Part Context
This part belongs to the Vishay Siliconix Si4946 series of dual N-channel MOSFETs. It shares the same pinout and general electrical specifications as the SI4946BEY-T1-E3 and SQ4946CEY-T1_GE3 variants, differing primarily in manufacturing lot codes or minor parameter tolerances rather than fundamental functional changes.
Replacement Considerations
SI4946BEY-T1-E3
FAQ
What is the maximum pulsed drain current capability?
The device supports a single pulse avalanche current (IAS) of 8 A with an energy rating of 3.2 mJ, and a general pulsed drain current (IDM) of 25 A for a duration of 100 μs.
How does the on-resistance vary with gate voltage?
At VGS = 10 V, the maximum RDS(on) is 0.0409 Ω. When driven at VGS = 4.5 V, the maximum RDS(on) increases to 0.0516 Ω.
What are the body diode reverse recovery characteristics?
The body diode exhibits a typical reverse recovery time (trr) of 21 ns and a reverse recovery charge (Qrr) of 1235 nC when tested at IF = 4.2 A and di/dt = 100 A/μs.
