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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 3A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：3A
- Rds On (Max) @ Id, Vgs：80mOhm @ 3.9A, 10V
- Vgs(th) (Max) @ Id：1V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4947ADY-T1-E3 is a P-channel power MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package designed for efficient thermal performance. The device features a drain-source voltage rating of 30V and a continuous drain current capacity of 3.5A at 25°C case temperature. Key electrical parameters include a maximum on-resistance (RDS(on)) of 65mΩ at a gate-source voltage of -4.5V, ensuring low conduction losses. The component operates within a junction temperature range of -55°C to +175°C and is RoHS compliant.
Feature Summary
- TrenchFET technology provides optimized specific on-resistance for improved efficiency.
- Lead-free finish with matte tin plating ensures environmental compliance and solderability.
- SOIC-8 package design facilitates automated assembly and compact board layout.
Applications
- Power management circuits requiring high-side switching
- Battery protection modules for portable devices
- DC-DC converter input/output stages
Procurement Notes
Verify the exact suffix configuration against the manufacturer's latest datasheet before procurement, as ordering codes may vary. Confirm availability status directly with authorized distributors, as lead times and stock levels fluctuate. Ensure the received components match the specified RoHS compliance and marking requirements for your manufacturing process.
Selection Notes
Select this component when a P-channel MOSFET with 30V breakdown and moderate current handling is required in an SOIC-8 footprint. Compare RDS(on) specifications at relevant gate drive voltages against alternative devices to ensure compatibility with existing control logic. Verify thermal resistance values if operating in enclosed environments or high ambient temperatures.
Part Context
This part belongs to the Vishay Siliconix SI4 series of TrenchFET power MOSFETs. The series is characterized by low on-resistance and fast switching speeds, targeting applications where space constraints and thermal efficiency are critical. The SOIC-8 package offers a balance between power handling capability and PCB area utilization compared to larger packages.
Replacement Considerations
Consult official replacement guides for direct equivalents. Potential substitutes may include other 30V P-channel MOSFETs in SOIC-8 packages from Vishay or other manufacturers, provided pinouts and electrical ratings align. Verify thermal and dynamic characteristics before substitution.
