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Product Detailed Parameters
- Description：MOSFET 2P-CH 60V 2.4A 8SOP
- Series：-
- Mfr：UMW
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：60V
- Current - Continuous Drain (Id) @ 25°C：2.4A (Ta)
- Rds On (Max) @ Id, Vgs：120mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：22nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W (Ta)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOP
- Grade：-
- Qualification：-
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Overview
The UMW SI4948BEY is a dual P-channel MOSFET in an SOP-8 package. It features a drain-source voltage of -60 V and a continuous drain current of -3.1 A at 25 °C. The on-state resistance is 120 mΩ at VGS = -10 V and 150 mΩ at VGS = -4.5 V. Gate threshold voltage ranges from -1 V to -3 V. Total gate charge is 22 nC. Power dissipation is 2.4 W at 25 °C. Operating junction temperature spans -55 °C to 175 °C.
Feature Summary
- Dual configuration integrating two independent P-channel MOSFETs within a single compact surface-mount package.
- Utilizes TrenchFET technology to achieve low on-state resistance for efficient power switching.
- Supports high thermal performance with an operating junction temperature range up to 175 °C.
Applications
- Power management circuits requiring dual channel control
- Load switch applications for battery-powered devices
- DC-DC converter input/output stages
Procurement Notes
Verify the manufacturer marking matches UTD Semiconductor Co., Limited specifications. Confirm the ordering code corresponds to the SOP-8 tape and reel format with a base quantity of 3000 units. Ensure the component meets RoHS compliance requirements as stated in the datasheet.
Selection Notes
Select this component when a dual P-channel solution is required with a -60 V rating. Verify that the -3.1 A continuous current capability meets the load requirements. Check that the 120 mΩ on-resistance at -10 V gate drive aligns with the system's efficiency targets.
Part Context
This device belongs to the SI4948 series of dual P-channel MOSFETs. It shares functional similarities with other industry-standard parts like the Vishay SI4948BEY-T1-E3, offering comparable electrical characteristics in a similar footprint for design compatibility.
Replacement Considerations
The Vishay SI4948BEY-T1-E3 is a confirmed substitute part number with identical electrical ratings and pinout configuration.
FAQ
What is the maximum pulsed drain current?
The maximum pulsed drain current (IDM) is -25 A with a pulse width of 10 µs.
What is the gate-body leakage current specification?
The gate-body leakage current (IGSS) is ±100 nA when VDS is 0 V and VGS is ±20 V.
How does the on-resistance vary with gate voltage?
The on-resistance is specified as 120 mΩ max at VGS = -10 V and 150 mΩ max at VGS = -4.5 V.
