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Product Detailed Parameters
- Description：MOSFET 2P-CH 8V 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：-
- Rds On (Max) @ Id, Vgs：21mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：2W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4965DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package and operates on silicon technology. The component is part of the SI4 series and is classified under transistors within the MOSFETs product category. Official documentation indicates that this specific part number has reached end-of-life status. The device is designed for single-supply applications with a maximum power dissipation of 640 mW.
Feature Summary
- Utilizes TrenchFET technology for optimized performance characteristics.
Applications
- Single-supply power management circuits
Procurement Notes
This component is officially listed as discontinued or end-of-life by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verification of current lifecycle status and alternative sourcing options is required before integration into new designs. Cross-reference with recommended alternatives such as the SI99 series is advised for ongoing projects.
Selection Notes
Designers should consider the end-of-life status when selecting this component for new products. Verify compatibility with existing PCB footprints if replacing older inventory. Evaluate alternative P-channel MOSFETs from the same manufacturer family that offer similar SOIC-8 packaging and electrical specifications to ensure supply chain stability.
Part Context
The SI4965DY-T1-E3 belongs to the SI4 series of MOSFETs produced by Vishay / Siliconix. It shares the SOIC-8 package format with other devices in this lineup but differs in specific electrical ratings and internal structure due to its P-channel configuration and TrenchFET construction. This series targets general-purpose switching applications requiring surface-mount reliability.
