SI4966DY-T1-E3

$1.45

Description：MOSFET 2N-CH 20V 8SOIC
Series：TrenchFET®

SKU:84a847eb0629 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2N-CH 20V 8SOIC
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 N-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：-
Rds On (Max) @ Id, Vgs：25mOhm @ 7.1A, 4.5V
Vgs(th) (Max) @ Id：1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：50nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：2W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SOIC
Grade：-
Qualification：-

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SI4966DY-T1-E3

Overview

The SI4966DY-T1-E3 is a dual N-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a 20 V drain-source voltage rating and operates within a -55 °C to 150 °C junction temperature range. The device provides a maximum on-state resistance of 0.025 Ω at VGS = 4.5 V and 0.035 Ω at VGS = 2.5 V. Continuous drain current reaches 7.1 A at 25 °C ambient temperature. Packaged in an SO-8 surface-mount format, it includes two independent channels with integrated body diodes.

Feature Summary

Dual N-channel configuration with independent gate and source terminals for each channel
TrenchFET power MOSFET architecture optimized for low on-resistance
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

Low-voltage DC-to-DC converter circuits
Power management modules requiring efficient switching
Battery protection and load switch applications

Procurement Notes

Verify the component against the official Vishay datasheet document number 70718 to confirm technical specifications. Ensure the ordering suffix matches the required lead-free and halogen-free attributes. Cross-reference package dimensions with document 71192 for accurate footprint design. Validate thermal performance parameters against specific board layout conditions before finalizing procurement.

Selection Notes

Select this component when a compact dual N-channel solution is required for low-voltage environments. The SO-8 package supports surface mounting on FR4 substrates. Evaluate the thermal resistance of 62.5 °C/W against system heat dissipation requirements. Confirm that the 20 V breakdown voltage aligns with the target circuit's operational limits and transient conditions.

Part Context

This part belongs to the Si4966 series manufactured by Vishay / Siliconix. It utilizes the SO-8 narrow package variant. The product line incorporates TrenchFET technology for enhanced power efficiency. Related documentation includes application notes regarding recommended minimum pad layouts for reliable surface mounting.