SI4966DY-T1-GE3

Overview

The Vishay Siliconix Si4966DY-T1-GE3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a drain-source voltage (VDS) of 20 V and a continuous drain current (ID) of ±7.1 A at 25 °C. The on-state resistance (RDS(on)) is specified as 0.025 Ω at VGS = 4.5 V and 0.035 Ω at VGS = 2.5 V. The device operates within a junction temperature range of -55 to 150 °C, with a maximum power dissipation of 2 W at 25 °C.

Feature Summary

• Dual N-channel configuration in an SO-8 package
• TrenchFET Power MOSFET technology for low on-resistance
• Halogen-free construction compliant with IEC 61249-2-21

Applications

• Low-side switching applications
• Power management circuits requiring low gate drive voltages
• Battery-powered equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status and lead-free composition. Confirm that the component meets RoHS Directive 2002/95/EC requirements before integration into regulated assemblies. Ensure the supply chain provides original manufacturer packaging to maintain device integrity during storage and handling.

Selection Notes

Select this component when a dual N-channel MOSFET with a 20 V rating and low RDS(on) at reduced gate voltages is required. Evaluate thermal performance based on the 62.5 °C/W junction-to-ambient resistance. Verify that the application's gate drive capability supports the specified VGS thresholds for optimal conduction characteristics.

Part Context

This part belongs to the Vishay Siliconix Si4966DY series of dual N-channel MOSFETs. It is housed in an SO-8 narrow package and utilizes TrenchFET technology to achieve low on-resistance. The product is designed for surface-mount applications and complies with environmental directives regarding halogen content.

Replacement Considerations

Consult official Vishay documentation for verified replacement part numbers. Do not substitute without confirming electrical compatibility and package dimensions.