SI4967DY-T1-E3

SI4967DY-T1-E3

  • Description:MOSFET 2P-CH 12V 8SOIC
  • Series:TrenchFET®

SKU:6e42246e1156 Category: Brand:

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Product Detailed Parameters

  • Description:MOSFET 2P-CH 12V 8SOIC
  • Series:TrenchFET®
  • Mfr:Vishay Siliconix
  • Package:Tape & Reel (TR)
  • Technology:MOSFET (Metal Oxide)
  • Configuration:2 P-Channel (Dual)
  • FET Feature:Logic Level Gate
  • Drain to Source Voltage (Vdss):12V
  • Current - Continuous Drain (Id) @ 25°C:-
  • Rds On (Max) @ Id, Vgs:23mOhm @ 7.5A, 4.5V
  • Vgs(th) (Max) @ Id:450mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs:55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • Power - Max:2W
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package:8-SOIC
  • Grade:-
  • Qualification:-

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SI4967DY-T1-E3

Overview

The SI4967DY-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an SOIC-8 surface-mount package and operates on silicon technology. The device is designed for SMD/SMT installation and belongs to the SI4 series of MOSFETs. Official documentation indicates it is an end-of-life product with restricted availability in certain regions. The component is RoHS compliant and functions as a discrete power transistor within electronic circuits.

Feature Summary

  • Utilizes TrenchFET technology for enhanced performance
  • Designed for surface-mount applications in compact layouts
  • Complies with RoHS environmental standards

Applications

  • Power management circuits requiring P-channel switching
  • Battery protection systems
  • Load switch applications in portable electronics

Procurement Notes

Verify current availability status directly with authorized distributors, as this component is listed as end-of-life. Confirm RoHS compliance details through official datasheets before integration. Check regional sales restrictions and ensure supply chain stability for long-term production needs due to discontinuation status.

Selection Notes

Consider alternative P-channel MOSFETs from the same manufacturer if long-term supply is required. Evaluate package compatibility with existing PCB footprints. Review thermal characteristics and voltage ratings against specific circuit requirements to ensure adequate performance margins.

Part Context

This part belongs to the Vishay Siliconix SI4 series, which focuses on power MOSFET solutions. The TrenchFET branding indicates advanced gate structure technology aimed at reducing on-resistance. The -T1 suffix typically denotes reel packaging, while -E3 signifies lead-free composition.

SI4967DY-T1-E3SI4967DY-T1-E3

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