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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 10.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：10.8A, 7.2A
- Rds On (Max) @ Id, Vgs：14.5mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：1080pF @ 15V
- Power - Max：3.1W, 2.5W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4972DY-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an 8-SOIC surface-mount package. The device supports a drain-source voltage of 30V and provides continuous drain currents of 10.8A and 7.2A for its two channels. Power dissipation capabilities are rated at 3.1W and 2.5W respectively under standard conditions.
Feature Summary
- Dual N-channel configuration within a single compact SOIC-8 package
- TrenchFET silicon technology for optimized performance
Applications
- Power management circuits requiring dual channel switching
- Battery protection systems
- DC-DC converter topologies
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and check for end-of-life notices, as availability may be restricted. Ensure the specific suffix matches design requirements before procurement.
Selection Notes
Select this component when a dual N-channel solution is required in a small footprint. Evaluate thermal constraints against the specified power dissipation ratings. Compare electrical characteristics with alternative dual MOSFETs to ensure compatibility with system voltage and current demands.
Part Context
This part belongs to the Vishay Siliconix TrenchFET family, designed for efficient power switching applications. The dual configuration allows for space-saving designs in portable electronics and industrial control systems where multiple low-voltage switches are necessary.
