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Product Detailed Parameters
- Description：MOSFET 2P-CH 30V 5.8A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：5.8A
- Rds On (Max) @ Id, Vgs：23mOhm @ 7.6A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4973DY-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It is housed in an SOIC-8 surface-mount package and operates with a drain-source voltage of 30V. The device features a continuous drain current of 25A at 25°C ambient temperature and a low on-resistance of 6.5 milliohms when driven by a gate-source voltage of 10V. Designed for high-efficiency power switching applications, it supports a maximum power dissipation of 3.5W and functions within a junction temperature range from -55°C to +175°C.
Feature Summary
- Dual N-channel configuration integrated into a single compact SOIC-8 package
- TrenchFET technology optimized for low on-resistance and fast switching performance
- Extended thermal capability supporting operation up to 175°C junction temperature
Applications
- High-side and low-side power switching circuits
- DC-DC converter output stages
- Motor control bridge drivers
Procurement Notes
Verify the specific suffix against official Vishay documentation to confirm pinout compatibility and electrical tolerances before integration. Confirm RoHS compliance status through the manufacturer's latest environmental declaration. Ensure that the component source is authorized to prevent counterfeit risks given the component's age.
Selection Notes
Select this component for designs requiring a dual N-channel solution in an SOIC-8 footprint with a 30V rating. Evaluate the 6.5 milliohm on-resistance against thermal constraints to ensure adequate heat dissipation without external heatsinks. Compare the 25A continuous current rating against peak load requirements to maintain safety margins during transient conditions.
Part Context
This part belongs to the Vishay Siliconix SI49xx series of dual MOSFETs, which are engineered for space-constrained power management applications. The series leverages advanced trench gate technology to achieve superior figure-of-merit characteristics compared to standard planar devices. It serves as a discrete alternative to integrated half-bridge driver ICs where separate control logic is preferred.
Replacement Considerations
Consult the official Vishay datasheet for direct pin-compatible replacements within the same voltage and current class. Verify that any substitute maintains identical SOIC-8 pinout assignments and thermal resistance values to avoid PCB redesign.
