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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 6A/4.4A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：6A, 4.4A
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4974DY-T1-E3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage rating of 30V. It is designed for general switching applications requiring low on-resistance and fast switching speeds. The component operates within a standard temperature range and complies with RoHS standards. This specific part number indicates reel packaging.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized performance characteristics
- Surface-mount installation in an SOIC-8 package
Applications
- General purpose power switching
- DC-DC converter circuits
- Load switching applications
Procurement Notes
Verify the current lifecycle status before procurement, as this component may be discontinued or subject to change. Confirm that the SOIC-8 package dimensions match the target PCB footprint. Ensure compatibility with the intended operating voltage and current requirements. Check for alternative sources if availability is limited due to end-of-life status.
Selection Notes
Select this component when a dual N-channel MOSFET with a 30V rating is required in an SOIC-8 package. Consider the thermal performance and on-resistance specifications relative to the application's power dissipation needs. Verify that the switching speed meets the system timing requirements. Compare against similar TrenchFET devices for potential cost or performance optimizations.
Part Context
This part belongs to the Vishay Siliconix SI49xx series of dual MOSFETs. It shares the SOIC-8 package form factor with other members of the family but differs in voltage and current ratings. The E3 suffix denotes lead-free compliance. The -T1 suffix specifies tape and reel packaging for automated assembly processes.
