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Product Detailed Parameters
- Description：MOSFET 2N-CH 75V 3.6A 8SOIC
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：75V
- Current - Continuous Drain (Id) @ 25°C：3.6A
- Rds On (Max) @ Id, Vgs：48mOhm @ 4.8A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.4W
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The SI4992EY-T1-GE3 is a dual N-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in an SOIC-8 surface-mount package. The device features a drain-source voltage (Vds) of 75V and a continuous drain current (Id) rating. It operates within a temperature range from -55°C to +150°C junction temperature. The component is RoHS compliant and part of the SI4 series. Note that the provided reference data lists the base model SI4992EY-T1-E3 as obsolete; verification of the specific GE3 suffix status is required.
Feature Summary
- Dual N-channel configuration for space-efficient circuit designs
- TrenchFET technology for optimized performance characteristics
- SOIC-8 surface-mount package for automated assembly
Applications
- Power management circuits requiring dual N-channel switching
- Low-side switching applications in consumer electronics
- DC-DC converter output stages
Procurement Notes
Verify current production status directly with Vishay or authorized distributors, as the referenced SI4992EY-T1-E3 variant is listed as obsolete. Confirm availability of the specific GE3 suffix version. Ensure compliance with RoHS directives and check for any supply chain restrictions or allocation notices before finalizing procurement plans.
Selection Notes
Select this component for applications requiring a dual N-channel MOSFET in an SOIC-8 package with a 75V Vds rating. Compare Rds(on) and gate charge specifications against system requirements. Verify thermal dissipation capabilities relative to the PCB layout and ambient operating conditions.
Part Context
This component belongs to the Vishay Siliconix SI4 series of TrenchFET MOSFETs. The series is characterized by low on-resistance and fast switching speeds. The SOIC-8 package provides a compact footprint suitable for dense board layouts. The dual configuration allows for synchronized control in bridge or high-current applications.
Replacement Considerations
Check for direct pin-compatible alternatives within the Vishay SI49xx family. Verify that substitute parts match the 75V Vds and Id ratings. Ensure the replacement maintains the SOIC-8 package and TrenchFET technology for equivalent thermal and electrical performance.
