SI5499DC-T1-GE3

Single FETs, MOSFETs Overview

The Vishay Siliconix SI5499DC-T1-GE3 is a P-channel MOSFET utilizing TrenchFET technology, rated for an 8 V drain-source voltage and a continuous drain current of -6 A. It features ultra-low on-resistance, specified at 0.036 Ω at a gate-source voltage of -4.5 V, and operates reliably down to a gate threshold of 1.5 V. The device is housed in a leadless 1206-8 ChipFET package with a maximum power dissipation of 6.2 W at 25 °C case temperature.

Single FETs, MOSFETs Feature Summary

• Utilizes TrenchFET Power MOSFET architecture for optimized low on-resistance performance
• Guaranteed functional operation at a gate-source voltage of 1.5 V for battery efficiency
• Manufactured using Halogen-free materials compliant with IEC 61249-2-21 standards

Single FETs, MOSFETs Applications

• Load switching for portable electronic devices
• Battery-powered equipment requiring extended operational life
• Low-voltage power management circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix GE3 to confirm compliance with both Lead (Pb)-free and Halogen-free requirements. Confirm that the component utilizes the 1206-8 ChipFET package format. Ensure design parameters align with the absolute maximum ratings provided in the official datasheet before finalizing procurement specifications.

Single FETs, MOSFETs Selection Notes

Select this component when designs require guaranteed functionality at extremely low gate voltages of 1.5 V. The 1206-8 ChipFET package provides a compact footprint suitable for space-constrained portable applications. Evaluate thermal resistance characteristics against system heat dissipation capabilities to ensure junction temperatures remain within safe operating limits.

Single FETs, MOSFETs Part Context

This part belongs to the Vishay Siliconix Si5499DC series of P-channel MOSFETs. It represents a specialized variant designed specifically for ultra-low voltage drive applications where standard logic-level thresholds are insufficient. The product line emphasizes high efficiency and minimal power loss in portable consumer electronics.

Single FETs, MOSFETs Replacement Considerations

The datasheet lists the Si5499DC-T1-E3 as a direct equivalent variant differing only in halogen content. No other cross-model substitutes are documented in the official documentation.

Single FETs, MOSFETs FAQ

What is the minimum gate-source voltage required for guaranteed operation?

The device is guaranteed to operate at a gate-source voltage of 1.5 V.

Does the Si5499DC-T1-GE3 meet environmental compliance standards?

Yes, it is manufactured using Halogen-free materials according to IEC 61249-2-21.