SI5504BDC-T1-E3

Description：MOSFET N/P-CH 30V 4A/3.7A 1206-8
Series：TrenchFET®

SKU:44df365a0651 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 30V 4A/3.7A 1206-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：4A, 3.7A
Rds On (Max) @ Id, Vgs：65mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：220pF @ 15V
Power - Max：3.12W, 3.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：1206-8 ChipFET™
Grade：-
Qualification：-

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SI5504BDC-T1-E3

Overview

The SI5504BDC-T1-E3 is a dual N- and P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology in a leadless 1206-8 ChipFET package. The N-channel device offers a drain-source voltage of 30 V with an on-resistance of 0.065 Ω at VGS = 10 V and a continuous drain current of 4 A. The P-channel counterpart provides -30 V breakdown with 0.140 Ω resistance at VGS = -10 V and -3.7 A current capability. Both channels feature a gate-source voltage rating of ±20 V and operate within a junction temperature range of -55 °C to +150 °C.

Feature Summary

Dual-channel configuration integrating separate N-channel and P-channel enhancement mode MOSFETs into a single compact footprint.
TrenchFET power architecture designed to minimize on-state resistance for improved efficiency in switching applications.
Leadless 1206-8 ChipFET package providing thermal performance comparable to larger SO-8 packages while significantly reducing board area requirements.

Applications

DC/DC converters for portable electronic devices
Load switch implementations

Procurement Notes

Verify the specific ordering suffix when sourcing components. The -E3 designation confirms lead-free compliance, whereas the -GE3 variant indicates both lead-free and halogen-free construction. Confirm that the required environmental specifications align with the exact suffix ordered to ensure material compliance matches project requirements.

Selection Notes

Select this component for designs requiring complementary N- and P-channel switching in space-constrained layouts. Evaluate the thermal resistance characteristics against the available copper pad area on the PCB, as the package relies heavily on board-level heat spreading for optimal dissipation. Ensure gate drive voltages remain within the specified limits for the target on-resistance performance.

Part Context

This part belongs to the Vishay Siliconix Si5504 series of dual MOSFETs. It utilizes the 1206-8 ChipFET package, which shares physical dimensions with standard 1206 passive components but delivers active semiconductor performance. The marking code for the device is EF.