SI5504DC-T1-GE3

Overview

The Vishay Siliconix SI5504DC-T1-GE3 is a complementary MOSFET pair in a 1206-8 ChipFET package. It integrates an N-channel and a P-channel device, each rated for a 30 V drain-source voltage (VDS) and a ±20 V gate-source voltage (VGS). The N-channel unit provides a maximum on-resistance (RDS(on)) of 0.085 Ω at VGS = 10 V and a continuous drain current (ID) of ±3.9 A. The P-channel counterpart features a maximum RDS(on) of 0.165 Ω at VGS = -10 V with a continuous ID of ±2.9 A. Operating junction temperatures range from -55 °C to +150 °C.

Feature Summary

• Complementary N-channel and P-channel configuration within a single leadless surface-mount package
• Utilizes TrenchFET power MOSFET technology for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Low-side and high-side switching circuits
• Power management modules requiring compact dual-transistor solutions
• Battery protection and load switch applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm halogen-free status and lead-free composition. Confirm that the component meets RoHS Directive 2002/95/EC requirements for your target market. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the manufacturing lot code.

Selection Notes

Select this component when a matched complementary pair is required in a minimal footprint. Evaluate the thermal resistance ratings, specifically the junction-to-ambient and junction-to-foot values, to ensure adequate heat dissipation for the intended steady-state or pulsed current loads. Verify that the gate drive voltages align with the specified thresholds for optimal on-state resistance.

Part Context

This part belongs to the Vishay Siliconix 1206-8 ChipFET family, designed for space-constrained surface-mount applications. The 'T1' designation indicates the specific tape-and-reel packaging format. The 'E3' suffix denotes lead-free terminals, while 'GE3' confirms compliance with both lead-free and halogen-free environmental standards.

Replacement Considerations

Direct replacements must match the 1206-8 ChipFET package dimensions and provide equivalent 30 V ratings for both N-channel and P-channel devices. Verify that substitute parts offer comparable RDS(on) values and thermal characteristics to maintain circuit efficiency and reliability without modifying the existing PCB layout.

FAQ

What is the maximum continuous drain current for the N-channel device?

The maximum continuous drain current for the N-channel device is ±3.9 A at an ambient temperature of 25 °C.

Does the Si5504DC-T1-GE3 meet halogen-free standards?

Yes, the GE3 suffix indicates that the component is halogen-free according to IEC 61249-2-21 definitions.

What is the typical total gate charge for the N-channel MOSFET?

The typical total gate charge (Qg) for the N-channel device is 5 nC under test conditions of VDS = 15 V, VGS = 10 V, and ID = 2.9 A.