SI5513DC-T1-GE3

Overview

The SI5513DC-T1-GE3 is a complementary N/P-channel MOSFET array housed in a 1206-8 ChipFET package. It features a drain-source voltage of 20 V. The N-channel device supports a continuous drain current of 3.1 A, while the P-channel device supports 2.1 A. Maximum power dissipation is rated at 1.1 W. The component utilizes TrenchFET technology for low on-resistance and fast switching characteristics.

Feature Summary

• Complementary N-channel and P-channel MOSFET configuration within a single surface-mount package
• Utilizes Vishay TrenchFET technology to achieve low on-resistance and efficient switching performance
• Designed for high-density applications with a compact 1206-8 footprint

Applications

• Low-voltage DC-to-DC converter circuits
• Synchronous rectification in point-of-load modules
• Battery protection and load switch applications

Procurement Notes

Verify the specific ordering suffix when sourcing replacements. The E3 suffix indicates lead-free composition, whereas the GE3 suffix denotes both lead-free and halogen-free compliance. Confirm that the required environmental certification matches the project specifications before procurement to ensure regulatory adherence.

Selection Notes

Select this component for designs requiring a matched N/P pair in minimal space. The 20 V rating suits low-voltage systems. Evaluate thermal constraints as the 1.1 W dissipation limit is modest. Ensure gate drive voltages remain within the specified limits to maintain reliable operation without exceeding maximum ratings.

Part Context

This part belongs to the Siliconix ChipFET family, which integrates discrete MOSFETs into standard passive footprints. The SI5513DC variant specifically provides complementary functionality, allowing designers to replace separate components with a single dual-device solution, thereby reducing board area and assembly complexity.

Replacement Considerations

• SI5513DC-T1-E3