SI5515CDC-T1-E3

Overview

The Vishay Siliconix SI5515CDC-T1-E3 is a dual-channel MOSFET featuring complementary N- and P-Channel configurations in a leadless 1206-8 ChipFET package. It utilizes TrenchFET technology with a 20 V drain-source voltage rating. The N-Channel exhibits an on-resistance of 0.036 Ω at VGS = 4.5 V, while the P-Channel shows 0.100 Ω at VGS = -4.5 V. Continuous drain current reaches 4 A for both channels at TC = 25 °C. Total gate charge is typically 6.5 nC for the N-Channel and 6.2 nC for the P-Channel.

Feature Summary

• Complementary N- and P-Channel configuration within a single leadless package
• TrenchFET power MOSFET architecture ensuring low on-resistance
• Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

• Load switching for portable electronic devices

Procurement Notes

Verify component authenticity by checking the marking code EH against lot traceability records. Confirm RoHS compliance status via official documentation. Ensure soldering procedures account for the exposed copper terminals characteristic of the leadless 1206-8 package singulation process.

Selection Notes

Select this component when board space constraints require a footprint comparable to standard passive components but necessitating power semiconductor performance. Evaluate thermal resistance requirements based on specific PCB copper spreading patterns, as junction-to-ambient resistance varies significantly with pad design.

Part Context

This device belongs to the 1206-8 ChipFET family, designed to replace larger packages like SO-8 while maintaining equivalent thermal dissipation capabilities. It integrates two independent power switches into a compact form factor suitable for high-density surface mount applications.

Replacement Considerations

SI5515CDC-T1-GE3 (Lead-free and Halogen-free variant)