SI5519DU-T1-GE3

$1.33

Description：MOSFET N/P-CH 20V 6A CHIPFET
Series：TrenchFET®

SKU:a30c018b155e Category: FET, MOSFET Arrays Brand: Vishay Siliconix

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET N/P-CH 20V 6A CHIPFET
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：N and P-Channel
FET Feature：-
Drain to Source Voltage (Vdss)：20V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：36mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id：1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：660pF @ 10V
Power - Max：10.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® ChipFET™ Dual
Supplier Device Package：PowerPAK® ChipFet Dual
Grade：-
Qualification：-

Download product information

SI5519DU-T1-GE3

Overview

The SI5519DU-T1-GE3 is a dual N-channel and P-channel MOSFET manufactured by Vishay Siliconix. It utilizes TrenchFET technology and is housed in a PowerPAK-ChipFET-Dual-8 surface-mount package. The component operates within a temperature range of -55°C to +150°C TJ. Key electrical parameters include a drain-source voltage (Vds) of 20 V, a continuous drain current (Id) of 6 A, and a maximum power dissipation (Pd) of 8.3 W. The device features low on-resistance values of 39 mOhms for the N-channel and 72 mOhms for the P-channel at specified conditions.

Feature Summary

Dual configuration integrating both N-channel and P-channel enhancement mode transistors in a single compact package.
TrenchFET technology implementation designed to minimize conduction losses and improve switching efficiency.
Surface-mount PowerPAK-ChipFET-Dual-8 packaging optimized for automated assembly and high-density PCB layouts.

Applications

DC/DC converter circuits requiring synchronous rectification or half-bridge topologies.
Low-voltage load switching applications in portable electronic devices.
Power management modules in battery-operated systems.

Procurement Notes

This component is officially listed as obsolete with an End-of-Life status. Availability is restricted, and it may no longer be produced by the manufacturer. Verification of current stock levels through authorized distributors is essential before design finalization. Alternative sourcing strategies should be considered due to the discontinued status.

Selection Notes

Designers should evaluate the 20 V drain-source voltage and 6 A continuous current ratings against circuit requirements. The dual N/P-channel configuration simplifies bill of materials but requires checking thermal performance given the 8.3 W power dissipation limit. Ensure the PowerPAK-ChipFET-Dual-8 footprint matches the PCB layout guidelines provided in the official datasheet.

Part Context

The SI5519DU-T1-GE3 belongs to the SI5 series of dual MOSFETs from Vishay Siliconix. This series is characterized by the use of TrenchFET technology for enhanced performance in low-voltage applications. The part is often referenced alongside similar dual configurations within the same product family for comparative analysis.