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SI5857DU-T1-GE3 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Vishay Siliconix. Its product description is MOSFET P-CH 20V 6A PPAK CHIPFET. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for SI5857DU-T1-GE3
- Description：MOSFET P-CH 20V 6A PPAK CHIPFET
- Series：LITTLE FOOT®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 4.5V
- Rds On (Max) @ Id, Vgs：58mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：480 pF @ 10 V
- FET Feature：Schottky Diode (Isolated)
- Power Dissipation (Max)：2.3W (Ta), 10.4W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerPAK® ChipFET™ Single
- Package / Case：PowerPAK® ChipFET™ Single
Single FETs, MOSFETs datasheet and documents for SI5857DU-T1-GE3
Single FETs, MOSFETs Overview
The SI5857DU-T1-GE3 is a TrenchFET power MOSFET manufactured by Vishay Siliconix. It features an N-channel configuration with a drain-source voltage rating of 20V and a continuous drain current of 6.0A at 25°C. The device exhibits a maximum on-resistance of 58mΩ at a gate-source voltage of 4.5V. It operates within a temperature range of -55°C to +150°C junction temperature, with a power dissipation capability of 10.4W. The component utilizes a PowerPAK SC-70 package.
Single FETs, MOSFETs Feature Summary
- Utilizes TrenchFET technology for optimized performance characteristics
- Designed for surface-mount applications in compact form factors
- Supports logic-level gate drive requirements
Single FETs, MOSFETs Applications
- Power management circuits
- Load switching applications
- DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific suffix and manufacturer details against official documentation before procurement. Confirm that the component status aligns with project lifecycle requirements, as availability may vary. Ensure compliance with RoHS directives and environmental regulations relevant to the target market. Cross-reference part numbers with authorized distributors to validate authenticity and traceability.
Single FETs, MOSFETs Selection Notes
Select this component based on its 20V voltage rating and 6.0A current capacity suitable for low-voltage systems. Consider the 58mΩ on-resistance for efficiency calculations in power paths. Evaluate the thermal performance within the specified operating temperature range. Ensure the PowerPAK SC-70 package fits the available PCB real estate constraints.
Single FETs, MOSFETs Part Context
This part belongs to the Vishay Siliconix TrenchFET family, known for high-performance discrete MOSFETs. The SI5857DU variant specifically targets applications requiring efficient switching in small packages. It represents a standard solution for low-side or high-side switching in portable and industrial electronics where space and efficiency are critical design parameters.
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