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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 4A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：65mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds：220pF @ 15V
- Power - Max：3.12W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si5902BDC-T1-GE3 is a dual N-channel 30 V (D-S) MOSFET utilizing TrenchFET technology. It features a leadless 1206-8 ChipFET package with two independent channels. Key electrical parameters include a drain-source breakdown voltage of 30 V, a continuous drain current of 4 A at TC = 25 °C, and a maximum power dissipation of 3.12 W at TC = 25 °C. The on-state resistance is specified as 0.065 Ω at VGS = 10 V and 0.100 Ω at VGS = 4.5 V. Total gate charge is typically 4 nC at VGS = 10 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Dual N-channel configuration in a compact leadless 1206-8 ChipFET package
- TrenchFET power MOSFET technology for low on-resistance
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load switch for portable applications
- DC/DC converter circuits
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm compliance requirements. The GE3 designation indicates lead-free and halogen-free status according to the manufacturer datasheet. Ensure that the component matches the exact part number required for the intended application specifications.
Selection Notes
Select this component when a dual N-channel MOSFET is required in a small surface-mount footprint. Consider the thermal performance characteristics provided in the datasheet, specifically the junction-to-foot thermal resistance, to ensure adequate heat dissipation for the target load conditions.
Part Context
This device belongs to the Vishay Siliconix TrenchFET family of power MOSFETs. It utilizes the 1206-8 ChipFET package, which offers thermal performance comparable to larger SO-8 packages while occupying significantly less board area. The dual-channel design allows for efficient implementation of bridge or high-side/low-side switching topologies.
Replacement Considerations
Consult the official Vishay datasheet for verified equivalent parts. Cross-referencing should focus on matching the 30 V rating, dual N-channel configuration, and 1206-8 package dimensions to ensure mechanical and electrical compatibility.
