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Product Detailed Parameters
- Description：MOSFET 2P-CH 20V 2.1A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：2.1A
- Rds On (Max) @ Id, Vgs：155mOhm @ 2.1A, 4.5V
- Vgs(th) (Max) @ Id：600mV @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs：6nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：1.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
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Overview
The Si5903DC-T1-E3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features a -20 V drain-source voltage (VDS) and operates within a junction temperature range of -55 °C to +150 °C. The device provides continuous drain currents of ±2.9 A at 25 °C and ±2.1 A at 85 °C. On-state resistance (RDS(on)) values are 0.155 Ω at VGS = -4.5 V, 0.180 Ω at VGS = -3.6 V, and 0.260 Ω at VGS = -2.5 V. Packaged in a leadless 1206-8 ChipFET format, it offers a maximum junction-to-ambient thermal resistance of 110 °C/W under steady-state conditions.
Feature Summary
- Dual P-channel configuration with independent channel control
- TrenchFET power MOSFET architecture for optimized performance
- Leadless 1206-8 ChipFET package design
Applications
- Power distribution circuits
- Load switches
- High-side switching applications
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -E3 designation indicates lead-free construction compliant with RoHS directives. Confirm availability status directly with authorized distributors or the manufacturer, as production lifecycles may change. Ensure that procurement channels provide valid traceability documentation matching the datasheet specifications.
Selection Notes
Evaluate the on-state resistance requirements against the available gate drive voltages (-4.5 V, -3.6 V, and -2.5 V). Consider the thermal management capabilities, noting the maximum junction-to-ambient resistance of 110 °C/W. Verify that the continuous drain current ratings meet the application's load demands across the expected operating temperature range.
Part Context
This component belongs to the Vishay Siliconix Si59xx series of dual MOSFETs. It shares the 1206-8 ChipFET package form factor with other devices in the lineup. The product utilizes standard silicon technology and is designed for surface-mount assembly on FR4 substrates.
Replacement Considerations
The Si5903DC-GE3 is an equivalent part number offering identical electrical characteristics while explicitly confirming halogen-free compliance according to IEC 61249-2-21 definitions.
