SI5903DC-T1-GE3

Overview

The Vishay Siliconix SI5903DC-T1-GE3 is a dual P-channel enhancement mode MOSFET utilizing TrenchFET technology. It features a 1206-8 ChipFET leadless package with two independent channels. The device supports a drain-source voltage of -20 V and continuous drain currents up to ±2.9 A at 25 °C. On-state resistance (RDS(on)) is specified at 0.155 Ω max at VGS = -4.5 V, 0.180 Ω max at VGS = -3.6 V, and 0.260 Ω max at VGS = -2.5 V. Total gate charge is typically 36 nC. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual channel configuration in a single compact leadless package
• TrenchFET power MOSFET structure for optimized performance
• Halogen-free construction compliant with IEC 61249-2-21 definition

Applications

• Power management circuits requiring low on-resistance
• Battery protection systems
• Load switching applications

Procurement Notes

Verify the specific ordering suffix when sourcing components. The GE3 suffix indicates lead-free and halogen-free compliance, whereas the E3 suffix denotes lead-free status only. Confirm RoHS Directive 2002/95/EC compliance requirements against project specifications before procurement.

Selection Notes

Select this component for designs requiring dual P-channel isolation within a small footprint. Evaluate thermal dissipation capabilities based on the maximum junction-to-ambient resistance ratings. Ensure gate drive voltages align with the specified RDS(on) thresholds for optimal conduction efficiency.

Part Context

This part belongs to the Vishay Siliconix TrenchFET family, characterized by advanced planar trench technology. The 1206-8 ChipFET package provides high current handling capability relative to its physical size, facilitating dense PCB layouts while maintaining robust electrical characteristics.

Replacement Considerations

The Si5903DC-T1-E3 serves as a direct functional substitute, differing primarily in halogen content. Verify package compatibility and electrical parameter alignment when considering alternative dual P-channel MOSFETs from other manufacturers.

FAQ

What is the maximum continuous drain current rating?

The continuous drain current is ±2.9 A at an ambient temperature of 25 °C and ±2.1 A at 85 °C.

How does the gate-source voltage affect on-state resistance?

RDS(on) increases as the magnitude of VGS decreases. It is 0.155 Ω max at -4.5 V, 0.180 Ω max at -3.6 V, and 0.260 Ω max at -2.5 V.

Is the device suitable for high-temperature environments?

Yes, the operating junction and storage temperature range extends from -55 °C to +150 °C.