SI5905BDC-T1-E3

Overview

The Vishay Siliconix SI5905BDC-T1-E3 is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an 8-pin 1206-8 ChipFET package. It features a drain-source voltage of -8 V and a continuous drain current of -4 A at 25 °C case temperature. The on-state resistance is specified as 0.080 Ω at VGS = -4.5 V and ID = 3.3 A. Total gate charge is typically 7 nC at VGS = -8 V. Operating junction temperature ranges from -55 °C to +150 °C.

Feature Summary

• Dual P-Channel configuration with integrated body diodes
• TrenchFET power MOSFET architecture for low on-resistance
• Lead-free and halogen-free construction compliant with IEC 61249-2-21

Applications

• Load switching for portable electronic devices

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging type. Confirm that the component meets RoHS Directive 2002/95/EC requirements if applicable to your manufacturing process. Ensure compatibility with the 1206-8 ChipFET surface mount footprint during procurement planning.

Selection Notes

Select this component when a compact dual P-Channel solution is required for low-voltage applications. Evaluate thermal performance based on the maximum junction-to-ambient resistance of 85 °C/W under steady-state conditions. Verify that the -8 V rating aligns with the system's supply voltage constraints.

Part Context

This part belongs to the Si5905BDC series manufactured by Vishay / Siliconix. It is a specialized dual MOSFET designed for space-constrained environments. The product utilizes a leadless 1206-8 ChipFET package, which requires specific soldering considerations due to exposed copper terminals resulting from the singulation process.

Replacement Considerations

The datasheet lists Si5905BDC-T1-GE3 as an alternative ordering option within the same family. Both variants are lead-free; however, the GE3 suffix explicitly denotes compliance with halogen-free definitions per IEC 61249-2-21.