SI5905DC-T1-E3

$0.39

Description：MOSFET 2P-CH 8V 3A 1206-8
Series：TrenchFET®

SKU:428d3d16df5b Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 8V 3A 1206-8
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：8V
Current - Continuous Drain (Id) @ 25°C：3A
Rds On (Max) @ Id, Vgs：90mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id：450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs：9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：-
Power - Max：1.1W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SMD, Flat Leads
Supplier Device Package：1206-8 ChipFET™
Grade：-
Qualification：-

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SI5905DC-T1-E3

Overview

The SI5905DC-T1-E3 is a dual P-channel MOSFET from Vishay Siliconix, utilizing TrenchFET technology. It features an 8 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides continuous drain currents up to ±4.1 A at 25 °C, with on-state resistance values of 0.090 Ω at VGS = -4.5 V, 0.130 Ω at VGS = -2.5 V, and 0.180 Ω at VGS = -1.8 V. Packaged in a leadless 1206-8 ChipFET format, it offers thermal resistances of 60 °C/W (max) junction-to-ambient for transient conditions and 110 °C/W for steady state.

Feature Summary

Dual P-channel configuration housed in a compact 1206-8 ChipFET package
TrenchFET power MOSFET architecture optimized for low gate charge and fast switching
Halogen-free construction compliant with IEC 61249-2-21 standards

Applications

Low-voltage load switching applications
Power management circuits requiring high efficiency at low voltages
Battery-powered portable devices

Procurement Notes

Verify the specific ordering suffix when sourcing replacements. The '-E3' suffix indicates a lead-free product. Confirm that the required component matches the exact electrical specifications and package dimensions provided in the official datasheet to ensure compatibility with existing designs.

Selection Notes

Select this component based on its 8 V voltage rating and low on-resistance characteristics suitable for efficient power handling. Ensure the design accommodates the thermal requirements defined by the junction-to-ambient resistance ratings. Validate that the gate drive voltage aligns with the specified thresholds for optimal performance.

Part Context

This part belongs to the Vishay Siliconix Si5905 series of dual P-channel MOSFETs. It is manufactured using advanced TrenchFET technology to achieve superior performance metrics compared to standard planar technologies. The 1206-8 ChipFET package allows for high-density surface mount assembly.