SI5908DC-T1-E3

Overview

The Vishay Siliconix Si5908DC-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features a drain-source voltage rating of 20 V and a continuous drain current of 5.9 A at 25 °C. The device exhibits ultra-low on-resistance, specified as 0.040 Ω at VGS = 4.5 V, 0.045 Ω at VGS = 2.5 V, and 0.052 Ω at VGS = 1.8 V. Gate threshold voltage ranges from 0.4 V to 1.0 V. Thermal resistance is rated at 90 °C/W junction-to-ambient (steady state) and 30 °C/W junction-to-foot.

Feature Summary

• Dual N-channel configuration with independent gate control for each channel within a compact footprint.
• TrenchFET power MOSFET architecture providing low on-state resistance and high power handling capability.
• Leadless 1206-8 ChipFET package design that maximizes thermal dissipation through the exposed drain foot.

Applications

• Load switching circuits
• Power amplifier (PA) switching
• Battery management switching

Procurement Notes

Verify component authenticity by checking the marking code 'CC XXX' against official datasheet standards. Confirm RoHS compliance and halogen-free status via the manufacturer's documentation. Ensure the ordering suffix matches the required lead-free specification. Validate package integrity upon receipt, noting the leadless nature of the ChipFET design.

Selection Notes

Select this component for applications requiring dual-channel switching in a minimal board area. Evaluate thermal performance based on the specific PCB copper pad patterns and vias used. Consider the gate threshold voltage range when designing drive circuits for low-voltage logic interfaces. Verify that the 20 V drain-source voltage rating accommodates peak transient voltages in the target application.

Part Context

The Si5908DC belongs to the Vishay Siliconix ChipFET family, designed to replace larger packages like SO-8 while maintaining comparable thermal performance. The 1206-8 footprint allows for significant board space reduction compared to traditional surface-mount packages. This series is engineered for high-density power management solutions where thermal efficiency and physical size are critical constraints.

Replacement Considerations

Si5908DC-T1-GE3