ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET 2P-CH 8V 4A 1206-8
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：8V
- Current - Continuous Drain (Id) @ 25°C：4A
- Rds On (Max) @ Id, Vgs：70mOhm @ 3.3A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：420pF @ 4V
- Power - Max：3.1W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SMD, Flat Leads
- Supplier Device Package：1206-8 ChipFET™
- Grade：-
- Qualification：-
Download product information
Overview
The Vishay Siliconix SI5915BDC-T1-E3 is a dual P-channel MOSFET utilizing TrenchFET technology, housed in a leadless 1206-8 ChipFET package. It features an 8 V drain-source voltage rating and a continuous drain current of -4 A at 25 °C case temperature. The on-state resistance (RDS(on)) is typically 0.070 Ω at VGS = -4.5 V and ID = -3.3 A, dropping to 0.086 Ω at VGS = -2.5 V. Total gate charge is typically 4 nC at VGS = -8 V. The device operates within a junction temperature range of -55 °C to 150 °C and includes a body diode with a reverse recovery time of up to 90 ns.
Feature Summary
- TrenchFET power MOSFET architecture providing low thermal resistance
- Leadless 1206-8 ChipFET package offering a footprint 40% smaller than TSOP-6
- Halogen-free construction compliant with IEC 61249-2-21 definition
Applications
- Load switching for portable devices
- Battery switching for portable devices
Procurement Notes
Verify the specific ordering suffix when sourcing components. The -E3 suffix indicates lead-free status, while the -GE3 suffix denotes both lead-free and halogen-free compliance. Confirm that the required unit meets the exact environmental specifications mandated by the design constraints before procurement.
Selection Notes
Select this component for applications requiring a compact dual P-channel configuration where board space is limited. Ensure the operating gate-source voltage aligns with the specified thresholds for optimal RDS(on) performance. Evaluate the thermal management requirements against the maximum junction-to-ambient resistance ratings provided in the datasheet.
Part Context
This component belongs to the Vishay Siliconix Si5915BDC series of dual P-channel MOSFETs. It is part of the broader ChipFET family designed for high-density surface mount applications. The product utilizes advanced trench gate technology to achieve low on-resistance within a miniature form factor suitable for modern portable electronics.
Replacement Considerations
The Si5915BDC-T1-GE3 serves as a verified alternative variant, distinguished by its halogen-free certification. Both variants share identical electrical characteristics and pinout configurations. Verify halogen compliance requirements before substituting between the -E3 and -GE3 suffixes.
