SI5915DC-T1-E3

Overview

The SI5915DC-T1-E3 is a dual P-channel MOSFET array manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an 8V drain-source voltage rating and a continuous drain current of 3.4A. The device is housed in a 1206-8 ChipFET surface-mount package with a power dissipation rating of 1.1W. This component is designed for low-voltage applications requiring compact form factors.

Feature Summary

• Dual P-channel configuration within a single compact package
• TrenchFET technology for optimized performance
• Surface-mount design suitable for automated assembly

Applications

• Low-voltage DC-DC converter circuits
• Battery protection systems
• Load switching applications

Procurement Notes

Verify the specific suffix 'T1' to ensure compatibility with the 1206-8 ChipFET tape-and-reel packaging format. Confirm RoHS compliance status through official manufacturer documentation prior to integration into environmentally regulated assemblies.

Selection Notes

Select this component when space constraints require a dual P-channel solution in a standard 1206 footprint. Ensure the application voltage does not exceed the 8V limit and that thermal management supports the 1.1W dissipation rating under expected operating conditions.

Part Context

This part belongs to the SI59 series of Vishay Siliconix power MOSFETs. It represents a specialized array variant designed for high-density PCB layouts where multiple channel control is necessary within minimal board area.

Replacement Considerations

SI5915DC-E3 is listed as an alternative part number alias.