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Product Detailed Parameters
- Description：MOSFET 2N-CH 20V 6A PPAK CHIPFET
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：6A
- Rds On (Max) @ Id, Vgs：39mOhm @ 4.4A, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds：520pF @ 10V
- Power - Max：8.3W
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：PowerPAK® ChipFET™ Dual
- Supplier Device Package：PowerPAK® ChipFet Dual
- Grade：-
- Qualification：-
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Overview
The SI5938DU-T1-E3 is a P-channel MOSFET manufactured by Vishay Siliconix, utilizing TrenchFET technology. It features an 8-pin DFN package and operates with a drain-source voltage of 20V and a continuous drain current of 6.0A. The device has a maximum power dissipation of 8.3W. It belongs to the SI5 series and is supplied in reel or cut tape formats. The component is silicon-based and complies with RoHS standards. This part number is identified as end-of-life.
Feature Summary
- P-channel MOSFET configuration
- TrenchFET technology implementation
- DFN surface-mount packaging
Applications
- Power distribution circuits
- Load switching applications
- Battery protection systems
Procurement Notes
Verify availability through authorized distributors as this component is listed as end-of-life. Confirm exact ordering suffixes for packaging variations such as reel or cut tape. Check for product change notifications regarding manufacturing updates. Ensure compliance with current environmental regulations before procurement.
Selection Notes
Select this component for low-voltage applications requiring 20V rating and 6.0A current capacity. Consider the thermal performance within the DFN package for heat dissipation requirements. Verify compatibility with control logic levels for gate drive signals. Evaluate alternative sources due to the end-of-life status of this specific part number.
Part Context
This component is part of the SI5 series from Vishay Siliconix. It utilizes TrenchFET technology for improved performance. The device is classified under MOSFETs and transistors. It is designed for surface-mount assembly in compact electronic designs.
Replacement Considerations
Check for recommended alternatives provided by the manufacturer. Verify pinout compatibility if substituting with similar P-channel MOSFETs. Review datasheet specifications for equivalent electrical characteristics.
