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The Vishay Siliconix SI5944DU-T1-E3 is a dual N-channel MOSFET utilizing TrenchFET technology. It features a 40 V drain-source voltage rating and operates within a junction temperature range of -55 °C to +150 °C. The device provides a maximum on-state resistance of 0.112 Ω at VGS = 10 V and 0.171 Ω at VGS = 4.5 V. Continuous drain current reaches 6 A when the case is held at 25 °C, with a total gate charge typically measuring 2.2 nC at VGS = 10 V. It is housed in a leadless PowerPAK ChipFET Dual 8 package.
Verify component authenticity through authorized channels. Confirm RoHS compliance status and check datasheet revision history. Validate package marking codes against official documentation. Ensure storage conditions meet specified limits before installation.
Evaluate thermal management requirements based on the 62 °C/W junction-to-ambient resistance. Verify that the 40 V breakdown voltage exceeds circuit peak voltages. Check if the 6 A continuous current rating meets load demands under specific case temperatures.
This component belongs to the Vishay Siliconix Si5944DU series. It utilizes the PowerPAK ChipFET Dual 8 package configuration. The product line employs TrenchFET technology for optimized switching performance.
SI5944DU-T1-GE3 is an officially documented equivalent part number.