SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The Vishay Siliconix SI5948DU-T1-GE3 is a dual N-channel 40 V (D-S) MOSFET utilizing TrenchFET power technology. It features a thermally enhanced PowerPAK ChipFET package with a small footprint and a thin 0.8 mm profile. The device provides a maximum continuous drain current of 6 A at TC = 25 °C, with an on-state resistance of 0.082 Ω at VGS = 10 V and 0.094 Ω at VGS = 4.5 V. Total gate charge is typically 2.2 nC at VGS = 10 V. Operating junction temperature ranges from -55 to +150 °C, and the component is lead-free and halogen-free.
Verify the exact ordering suffix against official Vishay documentation to confirm compliance attributes such as lead-free and halogen-free status. Confirm that the specific revision of the datasheet matches the manufacturing lot requirements. Ensure the procurement channel sources directly from authorized distributors to guarantee authenticity and traceability of the component.
Select this component when a dual N-channel MOSFET is required in a highly space-constrained application. The PowerPAK ChipFET package offers a low profile suitable for thin designs. Evaluate thermal management needs based on the specified junction-to-ambient and junction-to-case thermal resistances under expected operating conditions.
This part belongs to the Vishay Siliconix TrenchFET family, designed for efficient power switching. The SI5948DU variant specifically integrates two independent N-channel MOSFETs within a single leadless PowerPAK ChipFET package. This integration reduces board space compared to discrete solutions while maintaining high performance standards for modern electronic systems.
Consult official Vishay documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical specifications before substituting.