SI5997DU-T1-GE3

Description：MOSFET 2P-CH 30V 6A PPAK CHIPFET
Series：TrenchFET®

SKU:b014c2c60b59 Category: FET, MOSFET Arrays Brand: Vishay Siliconix

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 6A PPAK CHIPFET
Series：TrenchFET®
Mfr：Vishay Siliconix
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：Logic Level Gate
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6A
Rds On (Max) @ Id, Vgs：54mOhm @ 3A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：14.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：430pF @ 15V
Power - Max：10.4W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：PowerPAK® ChipFET™ Dual
Supplier Device Package：PowerPAK® ChipFet Dual
Grade：-
Qualification：-

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SI5997DU-T1-GE3

Overview

The Vishay Siliconix SI5997DU-T1-GE3 is a dual P-channel MOSFET featuring TrenchFET technology. It operates with a drain-source voltage of -30 V and offers low on-resistance, specifically 0.054 Ω at VGS = -10 V and 0.088 Ω at VGS = -4.5 V. The device supports a continuous drain current of -6 A and utilizes a thermally enhanced PowerPAK ChipFET package with a thin 0.8 mm profile. Total gate charge is typically 4.8 nC at VGS = -4.5 V. Thermal resistance from junction to case is 9.5 °C/W, and the operating temperature range spans from -55 °C to +150 °C.

Feature Summary

Dual P-channel configuration utilizing TrenchFET power MOSFET technology for optimized performance.
Thermally enhanced PowerPAK ChipFET package providing a small footprint area and a thin 0.8 mm profile.
Low on-resistance characteristics designed to minimize conduction losses in switching applications.

Applications

Load switch circuits for portable electronic devices
DC/DC converter topologies

Procurement Notes

Verify component authenticity by cross-referencing the datasheet document number 67186 and revision S10-2762-Rev. A directly with Vishay. Confirm that the ordering suffix -T1-GE3 corresponds to the lead-free and halogen-free reel packaging format specified in the official documentation before finalizing procurement.

Selection Notes

Select this component when a compact dual P-channel solution is required for low-voltage switching. Ensure the application accounts for the package-limited drain current rating of -6 A rather than the higher theoretical limits. Verify that the thermal management design accommodates the junction-to-ambient resistance of 105 °C/W for adequate heat dissipation.

Part Context

This part belongs to the Vishay Siliconix Si5997DU series of dual P-channel MOSFETs. It is manufactured using silicon technology and complies with RoHS Directive 2002/95/EC. The product is supplied in a leadless PowerPAK ChipFET package, which requires specific soldering recommendations due to exposed copper terminals resulting from the singulation process.