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Product Detailed Parameters
- Description：MOSFET 2N-CH 30V 0.5A SOT-363S
- Series：-
- Mfr：MCC (Micro Commercial Components)
- Package：Tape & Reel (TR)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel
- FET Feature：-
- Drain to Source Voltage (Vdss)：30V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Rds On (Max) @ Id, Vgs：500mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id：1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.55nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：34pF @ 25V
- Power - Max：300mW (Tj)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：6-TSSOP, SC-88, SOT-363
- Supplier Device Package：SOT-363S
- Grade：-
- Qualification：-
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Overview
The SI6303KDWS-TP is a dual N-channel MOSFET manufactured by Micro Commercial Components (MCC). It utilizes trench MOSFET technology and is housed in an SOT-363S package. The device features a drain-source voltage rating of 30V and a continuous drain current of 0.3A at 25°C, increasing to 0.5A at 100°C. The maximum gate-source voltage is ±12V. Total power dissipation is rated at 0.3W. The component operates within a junction temperature range of -55°C to +150°C and offers ESD protection up to 2kV (HBM).
Feature Summary
- Dual N-channel configuration with trench MOSFET technology for efficient small-signal switching.
- Integrated electrostatic discharge protection rated up to 2kV under human body model conditions.
- RoHS compliant construction with halogen-free materials and UL 94 V-0 flammability rating.
Applications
- Voltage controlled small signal switching circuits
- Battery management systems
- Portable electronic devices
Procurement Notes
Verify the authenticity of the SI6303KDWS-TP by purchasing exclusively from Micro Commercial Components or their authorized distributors. Counterfeit components pose significant risks; MCC does not provide warranty coverage for parts acquired through unauthorized sources. Ensure that the ordering suffix matches the specified tape and reel packaging requirements for your assembly process.
Selection Notes
Select this component when a compact dual N-channel solution is required for low-current applications. The SOT-363S package supports space-constrained designs. Consider the 0.3A continuous current limit and 30V breakdown voltage during circuit design. Verify thermal constraints against the 0.3W power dissipation rating and the 410°C/W thermal resistance value for proper heat management.
Part Context
This part belongs to the Micro Commercial Components discrete semiconductor portfolio, specifically within the MOSFET category. It serves as a dual-channel alternative to single-channel variants, offering integrated functionality in a minimal footprint. The product line emphasizes compliance with environmental standards such as RoHS and REACH.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation.
FAQ
What is the maximum gate-source voltage rating?
The maximum gate-source voltage is ±12V.
Does the device include ESD protection?
Yes, the SI6303KDWS-TP includes internal ESD protection rated up to 2kV according to the Human Body Model.
What is the operating junction temperature range?
The operating junction temperature range extends from -55°C to +150°C.
