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Product Detailed Parameters
- Description：MOSFET 2P-CH 12V 4.9A 8TSSOP
- Series：TrenchFET®
- Mfr：Vishay Siliconix
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 P-Channel (Dual)
- FET Feature：Logic Level Gate
- Drain to Source Voltage (Vdss)：12V
- Current - Continuous Drain (Id) @ 25°C：4.9A
- Rds On (Max) @ Id, Vgs：21mOhm @ 5.8A, 4.5V
- Vgs(th) (Max) @ Id：900mV @ 400µA
- Gate Charge (Qg) (Max) @ Vgs：28nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds：-
- Power - Max：830mW
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package：8-TSSOP
- Grade：-
- Qualification：-
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Overview
The Vishay Siliconix Si6913DQ is a dual P-Channel MOSFET utilizing TrenchFET technology, housed in an 8-pin TSSOP package. It features a -12 V drain-source voltage rating and a maximum continuous drain current of -5.8 A at 25 °C. The on-state resistance (RDS(on)) is specified as 0.021 Ω at VGS = -4.5 V, 0.028 Ω at VGS = -2.5 V, and 0.037 Ω at VGS = -1.8 V. The device supports a maximum power dissipation of 1.14 W at 25 °C and operates within a junction temperature range of -55 °C to +150 °C.
Feature Summary
- Dual P-Channel configuration with independent gate control for each channel.
- TrenchFET Power MOSFET structure providing low on-resistance.
- Surface-mount TSSOP-8 package designed for efficient thermal transfer via the drain leadframe.
Applications
- Load Switch
- Battery Switch
Procurement Notes
Verify the specific ordering suffix when purchasing. The Si6913DQ-T1-GE3 variant indicates lead-free and halogen-free compliance, whereas the -E3 suffix denotes lead-free status only. Confirm that the reel packaging matches the required quantity for production integration.
Selection Notes
Select this component for applications requiring compact dual-channel switching within a -12 V system. Ensure the gate drive voltage meets the minimum threshold for the desired RDS(on) performance. Verify that the PCB layout accommodates the TSSOP-8 footprint and provides adequate copper area for thermal management.
Part Context
This part belongs to the LITTLE FOOT series of surface-mount power MOSFETs. The TSSOP-8 package offers a smaller footprint and lower profile compared to traditional SOIC packages while maintaining comparable thermal performance through its custom leadframe design.
Replacement Considerations
No public substitute part numbers are documented in the provided datasheet.
FAQ
What is the maximum pulsed drain current for the Si6913DQ?
The maximum pulsed drain current (IDM) with a 10 µs pulse width is -30 A.
How does the gate threshold voltage vary with temperature?
The gate threshold voltage (VGS(th)) exhibits negative temperature dependence, decreasing from approximately -0.9 V at -55 °C to -0.4 V at 150 °C under standard test conditions.
What is the typical forward transconductance (gfs)?
The forward transconductance is typically 25 S when measured at VDS = -5 V and ID = -5.8 A.
